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| MCC 310 MCD 310 Thyristor Modules Thyristor/Diode Modules ITRMS = 2x 500 A ITAVM = 2x 320 A VRRM = 800-2200 V 3 VRSM VDSM V 900 1300 1500 1700 1900 VRRM VDRM V 800 1200 1400 1600 1800 Type 1 2 76 5 4 Version 1 MCC 310-08io1 MCC 310-12io1 MCC 310-14io1 MCC 310-16io1 MCC 310-18io1 Version 1 MCD 310-08io1 MCD 310-12io1 MCD 310-14io1 MCD 310-16io1 MCD 310-18io1 3 671 542 Symbol ITRMS, IFRMS ITAVM, IFAVM ITSM, IFSM Test Conditions TVJ = TVJM TC = 85C; 180 sine TVJ = 45C; VR = 0 TVJ = TVJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine Maximum Ratings 500 320 9200 9800 8000 8600 420 000 400 000 320 000 306 000 100 A A A A A A A2s A2s A2s A2s A/ms MCC 3 1 5 42 MCD oi2dt TVJ = 45C VR = 0 TVJ = TVJM VR = 0 (di/dt)cr TVJ = TVJM repetitive, IT = 960 A f =50 Hz, tP =200 ms VD = 2/3 VDRM IG = 1 A non repetitive, IT = 320 A diG/dt = 1 A/ms TVJ = TVJM; VDR = 2/3 VDRM RGK = ; method 1 (linear voltage rise) TVJ = TVJM IT = ITAVM tP = 30 ms tP = 500 ms 500 1000 120 60 20 10 -40...+140 140 -40...+125 A/ms V/ms W W W V C C C V~ V~ (dv/dt)cr PGM PGAV VRGM TVJ TVJM Tstg VISOL Md Weight Features International standard package Direct copper bonded Al2O3 -ceramic base plate Planar passivated chips Isolation voltage 3600 V~ UL registered, E 72873 Keyed gate/cathode twin pins q q q q q q Applications Motor control Power converter Heat and temperature control for industrial furnaces and chemical processes Lighting control Contactless switches q q q q q 50/60 Hz, RMS IISOL 1 mA t = 1 min t=1s 3000 3600 q q Mounting torque (M5) Terminal connection torque (M8) Typical including screws 2.5-5/22-44 Nm/lb.in. 12-15/106-132 Nm/lb.in. 320 g q q Advantages Space and weight savings Simple mounting Improved temperature and power cycling Reduced protection circuits (c) 2000 IXYS All rights reserved 1-4 030 Data according to IEC 60747 and refer to a single thyristor/diode unless otherwise stated. IXYS reserves the right to change limits, test conditions and dimensions MCC 310 MCD 310 Symbol IRRM IDRM VT, VF VT0 rT VGT IGT VGD IGD IL IH tgd tq QS IRM RthJC RthJK dS dA a Test Conditions TVJ = TVJM; VR = VRRM; VD = VDRM IT, IF = 600 A; TVJ = 25C For power-loss calculations only (TVJ = 140C) VD = 6 V; VD = 6 V; TVJ = TVJM; TVJ = 25C TVJ = -40C TVJ = 25C TVJ = -40C VD = 2/3 VDRM Characteristic Values 70 40 1.32 0.8 0.82 2 3 150 200 0.25 10 200 150 2 typ. 200 760 275 0.112 0.056 0.152 0.076 12.7 9.6 50 mA mA V V mW V V mA mA V mA mA mA ms ms mC A K/W K/W K/W K/W mm mm m/s2 Fig. 1 Gate trigger characteristics TVJ = 25C; tP = 30 ms; VD = 6 V IG = 0.45 A; diG/dt = 0.45 A/ms TVJ = 25C; VD = 6 V; RGK = TVJ = 25C; VD = 1/2 VDRM IG = 1 A; diG/dt = 1 A/ms TVJ = TVJM; IT = 300 A, tP = 200 ms; -di/dt = 10 A/ms VR = 100 V; dv/dt = 50 V/ms; VD = 2/3 VDRM TVJ = 125C; IT, IF = 400 A, -di/dt = 50 A/ms per per per per thyristor/diode; DC current module thyristor/diode; DC current module other values see Fig. 8/9 Creepage distance on surface Strike distance through air Maximum allowable acceleration Optional accessories for modules Keyed gate/cathode twin plugs with wire length = 350 mm, gate = yellow, cathode = red Type ZY 180L (L = Left for pin pair 4/5) UL 758, style 1385, Type ZY 180R (R = right for pin pair 6/7) CSA class 5851, guide 460-1-1 Fig. 2 Gate trigger delay time Dimensions in mm (1 mm = 0.0394") MCC MCD Threaded spacer for higher Anode/ Cathode construction: Type ZY 250, material brass 20 12 14 (c) 2000 IXYS All rights reserved 2-4 MCC 310 MCD 310 Fig. 3 Surge overload current ITSM, IFSM: Crest value, t: duration Fig. 4 oi2dt versus time (1-10 ms) Fig. 4a Maximum forward current at case temperature Fig. 5 Power dissipation versus onstate current and ambient temperature (per thyristor or diode) Fig. 6 Three phase rectifier bridge: Power dissipation versus direct output current and ambient temperature (c) 2000 IXYS All rights reserved 3-4 MCC 310 MCD 310 Fig. 7 Three phase AC-controller: Power dissipation versus RMS output current and ambient temperature 0.15 K/W Fig. 8 Transient thermal impedance junction to case (per thyristor or diode) 30 DC ZthJC 0.10 RthJC for various conduction angles d: d DC 180C 120C 60C 30C RthJC (K/W) 0.112 0.113 0.114 0.115 0.115 0.05 Constants for ZthJC calculation: i 0 0.00 10-3 10-2 10-1 100 101 s 102 Rthi (K/W) 0.003 0.0143 0.0947 ti (s) 0.099 0.168 0.456 t 1 2 3 0.20 K/W ZthJK 0.15 Fig. 9 Transient thermal impedance junction to heatsink (per thyristor or diode) 30 DC RthJK for various conduction angles d: d RthJK (K/W) 0.152 0.154 0.154 0.155 0.155 DC 180C 120C 60C 30C 0.10 0.05 Constants for ZthJK calculation: i 0 0.00 10-3 10-2 10-1 100 101 s 102 Rthi (K/W) 0.003 0.0143 0.0947 0.04 ti (s) 0.099 0.168 0.456 1.36 835 t 1 2 3 4 (c) 2000 IXYS All rights reserved 4-4 |
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